Modeling the single-gate, double-gate, and gate-all-around tunnel field-effect transistor

By A. Verhulst, B. Sorée, D. Leonelli, William G. Vandenberghe, G. Groeseneken. 2010

238 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/4eea3372fec0cc7e246b1262289a06451b45ed82

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In Electrical and Electronic Engineering

1. Sanjay Kumar
2. Satyabrata Jit
3. Balraj Singh
4. Kunal Singh
5. Ekta Goel

Citations in the corpus

• 2-D Analytical Modeling of the Electrical Characteristics of Dual-Material Double-Gate TFETs With a SiO2/HfO2 Stacked Gate-Oxide Structure (2017, background): “A number of analytical models have been reported for the electrical characteristics such as the channel potential, ON-current and threshold voltage of the single gate (SG), DG and gate-all-around (GAA) TFET structures [13]–[15] with a single material gate (SMG), or dual material gate (DMG) electrode”
• A 2-D Analytical Model for Double-Gate Tunnel FETs (2014, background): “Several analytical studies on TFETs have been carried out in [7]–[19].”