Direct and Indirect Band-to-Band Tunneling in Germanium-Based TFETs

By K. Kao, A. Verhulst, William G. Vandenberghe, B. Sorée, Guido Groeseneken, K. D. Meyer. IEEE Transactions on Electron Devices, 2012

418 citations recorded by the source corpus.

Subfields: Biomedical Engineering, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/368e48f614a7b8fc5ab43f6d147bd67284018dba

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Partha Sarathi Gupta
2. Sanatan Chattopadhyay
3. S. Kanungo
4. Hafizur Rahaman

Citations in the corpus

• Optimization of Gate-on-Source-Only Tunnel FETs With Counter-Doped Pockets (2012, background): “along a specific direction are used [22].”
• Study and Analysis of the Effects of SiGe Source and Pocket-Doped Channel on Sensing Performance of Dielectrically Modulated Tunnel FET-Based Biosensors (2016, methodology): “In addition, the results of this paper have been verified using the theoretically calculated indirect BTBT parameters (ABTBT and BBTBT) for Si and Ge from [29].”