Boosting the on-current of a n-channel nanowire tunnel field-effect transistor by source material optimization

By A. Verhulst, William G. Vandenberghe, K. Maex, G. Groeseneken. 2008

142 citations recorded by the source corpus.

Subfields: Biomedical Engineering, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/9c77c89a668fc678e1fdd690cf3276efaea4d97a

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Biomedical Engineering

1. Robert Puers
2. C. Hoof

In Electrical and Electronic Engineering

1. Robert Puers
2. H. P. Neves
3. Marie Garcia Bardon
4. C. Hoof

Citations in the corpus

• Direct and Indirect Band-to-Band Tunneling in Germanium-Based TFETs (2012, background): “mr is appropriate to the light hole mlh and the lightest electron effective mass me along a certain tunneling direction (mr = memlh/me + mlh) [10], [22] because the lightest carriers have the dominant contribution”
• Pseudo-Two-Dimensional Model for Double-Gate Tunnel FETs Considering the Junctions Depletion Regions (2010, methodology): “However, few analytical models have been proposed for the TFET [8]–[10].”