Critical dimensions for the plastic relaxation of strained axial heterostructures in free-standing nanowires

By F. Glas. 2006

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Complementary Silicon-Based Heterostructure Tunnel-FETs With High Tunnel Rates (2008, background): “the reduced lattice mismatch at the source–channel interface [13], [14].”
Rational design of type-II nano-heterojunctions for nanoscale optoelectronics (2020, background): “obtained, as the critical thickness beyond which interfacial dislocations appear, is depended on the radius of the nanowire and becomes infinite for radii less than some critical value [98].”
A review of III–V nanowire infrared photodetectors and sensors (2017, background): “The critical thickness in both core–shell [7] and axial [8, 9] nanowire heterostructures is larger than their thin film counterparts because strain can be relaxed elastically at the nanowire free surface.”
III–V nanowire photovoltaics: Review of design for high efficiency (2013, background): “The critical thickness in both core–shell [119–125] and axial [126–130] nanowire heterostructures is larger than their thin film counterparts because strain can be relaxed elastically at the nanowire free surface.”
Room-temperature lasing in a single nanowire with quantum dots (2015, unknown): “During the NW growth, the small diameter and a lateral relaxation of the strain allows for the coherent formation of lattice-mismatched heterostructures beyond the critical thickness allowed with planar architectures.[24,25] This should facilitate the realization of densely-packed, strain-relieved Q”