A Comparative Study of NBTI and PBTI (Charge Trapping) in SiO2/HfO2 Stacks with FUSI, TiN, Re Gates

By Sufi Zafar, Young-Hee Kim, Vijay Narayanan, Cyril Cabral, Vamsi k. Paruchuri, Bruce B. Doris, J. H. Stathis, Alessandro C. Callegari, Michael P. Chudzik. 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers., 2006

251 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/1bce7837d4ca7e745714ff0378ce7e480aa8d2dc

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In Electrical and Electronic Engineering

1. Gennadi Bersuker
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Citations in the corpus

• A Physical Model of the Temperature Dependence of the Current Through $\hbox{SiO}_{2}\hbox{/}\hbox{HfO}_{2}$ Stacks (2011, background): “[12], and to worsen the device performances by degrading the channel mobility [1] and increasing the static power dissipation by enhancing the gate current.”