Polarity effect on the temperature dependence of leakage current through HfO2/SiO2 gate dielectric stacks

By Zhen Xu, Michel Houssa, S. Gendt, M. Heyns. 2002

169 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/4c021bed4dd08de22dabbad46d419a04066a37d8

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In Electrical and Electronic Engineering

1. Gennadi Bersuker
2. Luca Larcher
3. Luca Vandelli
4. Andrea Padovani
5. Daniele Ielmini

Citations in the corpus

• A Physical Model of the Temperature Dependence of the Current Through $\hbox{SiO}_{2}\hbox{/}\hbox{HfO}_{2}$ Stacks (2011, background): “Several studies have investigated the temperature dependence of the charge transport through the HfO2 stacks in MOSFET devices [6], [7], [13]–[16].”
• Electronic properties of hafnium oxide: A contribution from defects and traps (2016, unknown): “Further is will be shown that the charge transport in HfO2 proceeds via tunnel hops of charge carriers over traps [7,8,53,68].”