Graphene Nanoribbon Tunnel Transistors

By Qin Zhang, T. Fang, Huili Grace Xing, Alan C. Seabaugh, Debdeep Jena. IEEE Electron Device Letters, 2008

217 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/19f4fab609f6e57474ba91d1791047306224d2f0

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In Electrical and Electronic Engineering

1. Steven J. Koester
2. Siyu Koswatta
3. Wilfried E. Haensch

Citations in the corpus

• Effective Capacitance and Drive Current for Tunnel FET (TFET) CV/I Estimation (2009, methodology): “While CoxVDD/ION, where Cox is the oxide capacitance, is used in [6], CggVDD/ION, where Cgg is the total gate capacitance of the TFET including the quantum capacitance of the channel, is used in [7].”
• Low-Voltage Tunnel Transistors for Beyond CMOS Logic (2010, unknown): “VGS for the theoretical TFET reports across material systems [5], [ 44 ]–[57] versus 3-nm CMOS technology.”