Phase Change Memory

By Matthew J. Breitwisch. International Interconnect Technology Conference, 2008

767 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/51d5f4730d5ecea25aa192a8e592c62a90811b91

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Steven Swanson
2. Ranjit Jhala
3. Rajesh K. Gupta
4. Jian Xu
5. Azman Hassan
6. C. Idumah

In Materials Chemistry

1. Steven Swanson
2. Jian Xu
3. Azman Hassan
4. C. Idumah

Citations in the corpus

• NOVA: A Log-structured File System for Hybrid Volatile/Non-volatile Main Memories (2016, background): “Emerging non-volatile memory technologies, such as spin-torque transfer RAM (STT-RAM) [28, 42], phase change memory (PCM) [10, 18, 29, 52], resistive RAM (ReRAM) [22, 62], and 3D XPoint memory technology [1], promise to provide fast, non-volatile, byte-addressable memories.”
• NV-Heaps: making persistent objects fast and safe with next-generation, non-volatile memories (2011, background): “PCM stores data as the crystalline state of a chalcogenide layer [9] and has the potential to become a viable main memory technology as DRAM’s scaling falters [35, 49, 62].”
• A Memristor Device Model (2011, unknown): “The model has not yet been tested for its validity with other memristive devices such as spintronic memristors [12], RRAM devices [13], or phase change memory [14].”
• Recently emerging trends in thermal conductivity of polymer nanocomposites (2016, background): “In the amorphous phase, atomic vibrations induce heat conduction, while electron heat conduction is essential in at least one of the crystalline phases (Wong et al. 2010).”