Generalized effective-mass approach for n-type metal-oxide-semiconductor field-effect transistors on arbitrarily oriented wafers

By Anisur Rahman, Mark S. Lundstrom, Avik W. Ghosh. 2004

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The general theory for quantum simulation of cubic semiconductor n-type metal-oxide-semiconductor field-effect transistors is presented within the effective-mass equation approach. The full three-dimensional transport problem is described in terms of coupled transverse subband modes which arise due to quantum confinement along the body thickness direction. Couplings among the subbands are generated for two reasons: due to spatial variations of the confinement potential along the transport direction and due to nonalignment of the device coordinate system with the principal axes of the constant energy conduction-band ellipsoids. The problem simplifies considerably if the electrostatic potential is separable along the transport and confinement directions, and further if the potential variations along the transport direction are slow enough to prevent dipolar coupling (Zener tunneling) between subbands. In this limit, the transport problem can be solved by employing two unitary operators to transform an arbit...

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

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