nanoMOS 2.5: A two-dimensional simulator for quantum transport in double-gate MOSFETs
By Zhibin Ren, R. Venugopal, Sebastien Goasguen, Supriyo Datta, Mark S. Lundstrom. 2003
289 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/3bf65b49c4860712ab985f99a7374e12a212a86d
How researchers see this paper
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In Atomic and Molecular Physics, and Optics
- Anisur Rahman
- Avik W. Ghosh
- M. Anantram
- Jing Guo
- Mark S. Lundstrom
- Alexei Svizhenko
- Ali Javey
- Phaedon Avouris
In Electrical and Electronic Engineering
- Mark S. Lundstrom
- Anisur Rahman
- Jing Guo
- Avik W. Ghosh
- M. Anantram
- Alexei Svizhenko
- Ali Javey
- Asen Asenov
Citations in the corpus
- Generalized effective-mass approach for n-type metal-oxide-semiconductor field-effect transistors on arbitrarily oriented wafers (2004, methodology): “5, a freeware, has been developed to simulate the ballistic and scattering characteristics of ultra-thin-body (UTB), double gate (DG) n-MOSFETs using both semiclassical (BTE) and fully quantum (NEGF) methods [17, 18].”
- A Self-Consistent Full 3-D Real-Space NEGF Simulator for Studying Nonperturbative Effects in Nano-MOSFETs (2007, methodology): “902867 mation [6], which couples 1-D nonequilibrium Green function (NEGF) transport simulations to transverse states obtained from solutions of the Schrödinger equation in 2-D slices.”
- Assessment of high-frequency performance potential of carbon nanotube transistors (2005, methodology): “Fig. 6(a) shows the modeled double-gate, ultrathin-body Si MOSFET [ 24 ].”