A compact scattering model for the nanoscale double-gate MOSFET

By Anisur Rahman, Mark S. Lundstrom. 2002

199 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/6356b0ac62ecd6a230dbc5e992769a62f654c942

How researchers see this paper

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In Electrical and Electronic Engineering

1. Enrico Sangiorgi
2. Luca Selmi
3. David Esseni

Citations in the corpus

• Understanding quasi-ballistic transport in nano-MOSFETs: part I-scattering in the channel and in the drain (2005, background): “firm that the model in [14], [15] captures the essential physics of quasi-ballistic transport in scaled devices and can be used to develop physically-sound compact models [32].”
• Ultimately thin double-gate SOI MOSFETs (2003, background): “811371 ulations have demonstrated the advantage of DG-MOSFETs down to 10 nm and below [9], [18], [19].”