A simple quantum mechanical treatment of scattering in nanoscale transistors

By R. Venugopal, M. Paulsson, Sebastien Goasguen, Supriyo Datta, Mark S. Lundstrom. 2003

170 citations recorded by the source corpus.

We present a computationally efficient, two-dimensional quantum mechanical simulation scheme for modeling dissipative electron transport in thin body, fully depleted, n-channel, silicon-on-insulator transistors. The simulation scheme, which solves the nonequilibrium Green’s function equations self consistently with Poisson’s equation, treats the effect of scattering using a simple approximation inspired by the “Buttiker probes,” often used in mesoscopic physics. It is based on an expansion of the active device Hamiltonian in decoupled mode space. Simulation results are used to highlight quantum effects, discuss the physics of scattering and to relate the quantum mechanical quantities used in our model to experimentally measured low field mobilities. Additionally, quantum boundary conditions are rigorously derived and the effects of strong off-equilibrium transport are examined. This paper shows that our approximate treatment of scattering, is an efficient and useful simulation method for modeling electron...

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/c0c487f31f05d93e77822522bbfdc204dda9bdf8

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In Atomic and Molecular Physics, and Optics

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Citations in the corpus

Toward Nanowire Electronics (2008, background): “However, one has to keep in mind that this implies a deteriorated ON-state current due to a small BTBT probability.”
Generalized effective-mass approach for n-type metal-oxide-semiconductor field-effect transistors on arbitrarily oriented wafers (2004, methodology): “Together, the NEGF formalism and the effective mass equation have been used to describe transport in nanoscale MOSFETs both in the ballistic limit [6-9], as well including the effects of carrier scattering [10, 11].”
Modeling of High-Performance p-Type III–V Heterojunction Tunnel FETs (2010, background): “band gap Eg (see [7] and the references therein), and inelastic scattering is accounted for with Buettiker probes [14].”
nanoMOS 2.5: A two-dimensional simulator for quantum transport in double-gate MOSFETs (2003, methodology): “A well-defined prescription for including scattering exists, but the computational burden rapidly gets out of hand if one resolves scattering between transverse modes [36].”
Monolayer $\hbox{MoS}_{2}$ Transistors Beyond the Technology Road Map (2012, background): “A low field mobility of 200 cm(2) · V−1 · s−1 is assumed for both the MoS2 [1] and UTB silicon [17].”
Tunneling phenomena in carbon nanotube field‐effect transistors (2008, methodology): “1 γ = which is related to the mean free path for scattering scat l via scat 2 / a l γ = [23].”