Michael Nelhiebel

Electrical and Electronic Engineering · 2009–2011

A researcher in the Science corpus: 3 papers; trusts 1 researcher and is trusted by 1 researcher here, as inferred from the citation graph.

Subfields

Whom Michael Nelhiebel trusts

Their strongest outbound trust, strongest first, inferred from their citations.

  1. Ben Kaczer (in Electrical and Electronic Engineering)

Who trusts Michael Nelhiebel

  1. Tibor Grasser (in Electrical and Electronic Engineering)

Papers from Michael Nelhiebel's perspective

Ordered by how strongly the researchers Michael Nelhiebel trusts endorse each paper. Same corpus, a different order for every researcher.

  1. Disorder-controlled-kinetics model for negative bias temperature instability and its experimental verification (2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual.)
  2. Material dependence of hydrogen diffusion: implications for NBTI degradation (IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.)
  3. Characterization and Physical Origin of Fast Vth Transient in NBTI of pMOSFETs with SiON Dielectric (International Electron Devices Meeting)
  4. On the Physical Mechanism of NBTI in Silicon Oxynitride p-MOSFETs: Can Differences in Insulator Processing Conditions Resolve the Interface Trap Generation versus Hole Trapping Controversy? (2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual)
  5. AC NBTI studied in the 1 Hz -- 2 GHz range on dedicated on-chip CMOS circuits (International Electron Devices Meeting)
  6. Universal recovery behavior of negative bias temperature instability [PMOSFETs] (IEEE International Electron Devices Meeting 2003)
  7. A two-stage model for negative bias temperature instability (IEEE International Reliability Physics Symposium)
  8. Two independent components modeling for Negative Bias Temperature Instability (IEEE International Reliability Physics Symposium)
  9. Analysis of NBTI Degradation- and Recovery-Behavior Based on Ultra Fast VT-Measurements (2006 IEEE International Reliability Physics Symposium Proceedings)
  10. NBTI impact on transistor and circuit: models, mechanisms and scaling effects [MOSFETs] (IEEE International Electron Devices Meeting 2003)

Their papers