Uttam Singisetti

Electronic, Optical and Magnetic Materials · 2013–2020

A researcher in the Science corpus: 5 papers; trusts 4 researchers and is trusted by 0 researchers here, as inferred from the citation graph.

Subfields

Whom Uttam Singisetti trusts

Their strongest outbound trust, strongest first, inferred from their citations.

  1. Akito Kuramata (in Electronic, Optical and Magnetic Materials)
  2. Masataka Higashiwaki (in Electronic, Optical and Magnetic Materials)
  3. Shigenobu Yamakoshi (in Electronic, Optical and Magnetic Materials)
  4. Kohei Sasaki (in Electronic, Optical and Magnetic Materials)

Papers from Uttam Singisetti's perspective

Ordered by how strongly the researchers Uttam Singisetti trusts endorse each paper. Same corpus, a different order for every researcher.

  1. 3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $\beta $ -Ga2O3 MOSFETs (IEEE Electron Device Letters)
  2. High breakdown electric field in β-Ga2O3/graphene vertical barristor heterostructure
  3. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
  4. 1.85 kV Breakdown Voltage in Lateral Field-Plated Ga2O3 MOSFETs (IEEE Electron Device Letters)
  5. Enhancement-Mode Ga2O3 Vertical Transistors With Breakdown Voltage >1 kV (IEEE Electron Device Letters)
  6. Electrical properties of β-Ga2O3 single crystals grown by the Czochralski method
  7. $\beta$ -Ga2O3 MOSFETs for Radio Frequency Operation (IEEE Electron Device Letters)
  8. β-Ga2O3 on insulator field-effect transistors with drain currents exceeding 1.5 A/mm and their self-heating effect
  9. The 1.6-kV AlGaN/GaN HFETs (IEEE Electron Device Letters)
  10. Growth of β-Ga2O3 Single Crystals by the Edge-Defined, Film Fed Growth Method

Their papers