Growth of β-Ga2O3 Single Crystals by the Edge-Defined, Film Fed Growth Method
By H. Aida, K. Nishiguchi, H. Takeda, Natsuko Aota, K. Sunakawa, Y. Yaguchi. 2008
454 citations recorded by the source corpus.
Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry, Renewable Energy, Sustainability and the Environment
View Paper: https://www.semanticscholar.org/paper/f2d6e4707edde0bb74b2230176fb6ffbd79d6f70
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Electronic, Optical and Magnetic Materials
- Masataka Higashiwaki
- Shigenobu Yamakoshi
- Uttam Singisetti
- T. Masui
- Ke Zeng
- Akito Kuramata
- Z. Galazka
- Kohei Sasaki
In Materials Chemistry
- Masataka Higashiwaki
- Shigenobu Yamakoshi
- Uttam Singisetti
- T. Masui
- Ke Zeng
- Akito Kuramata
- Z. Galazka
- Kohei Sasaki
In Renewable Energy, Sustainability and the Environment
Citations in the corpus
- Growth of β-Ga2O3 single crystals using vertical Bridgman method in ambient air (2016, unknown): “Thus it is likely that we will be able to produce large size crystals economically and in an energy-efficient manner, rather than bulk crystals of SiC and/or GaN. β-Ga2O3 bulk crystals have until now been grown by optical floating-zone (OFZ) [7,10,11], Czochralski (CZ) [6,8,12] and edge-defined film”
- 1.85 kV Breakdown Voltage in Lateral Field-Plated Ga2O3 MOSFETs (2018, background): “tronics applications due to its high Baliga’s Figure of Merit (BFoM) [1], and also due to the mature bulk crystal growth technologies [2]–[3].”
- Growth and characterization of α-, β-, and ϵ-phases of Ga2O3 using MOCVD and HVPE techniques (2018, unknown): “edu floating-zone (FZ) [7–10], edge-defined film-fed growth (EFG) [11], and Czochralski (CZ) [12,13] methods.”