The 1.6-kV AlGaN/GaN HFETs

By N. Tipirneni, A. Koudymov, V. Adivarahan, Jinwei Yang, G. Simin, M. Khan. IEEE Electron Device Letters, 2006

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Single-Chip Boost Converter Using Monolithically Integrated AlGaN/GaN Lateral Field-Effect Rectifier and Normally Off HEMT (2009, background): “W IDE-BANDGAP GaN-based semiconductor materials are attracting a great deal of interest as the preferred materials for devices aimed at high-power, high-frequency, and high-temperature operations [1], [2].”
SiC power devices — Present status, applications and future perspective (2011, background): “In Table II a summary of recent published results from GaN based high voltage devices is given [11-19]”
1.85 kV Breakdown Voltage in Lateral Field-Plated Ga2O3 MOSFETs (2018, methodology): “Previously GaN [19]–[21] and SiC [22] devices used Fluorinert FC-77 liquid, to significantly improve VB R compared to measurement in air owing to the higher dielectric breakdown strength of Fluorinert.”
Breakdown Enhancement of AlGaN/GaN HEMTs on 4-in Silicon by Improving the GaN Quality on Thick Buffer Layers (2009, background): “AlGaN/GaN high-electron mobility transistors (HEMT) have a high figure of merit BV (2)/Ron [1], owing to much lower ON-state resistance (Ron) and higher breakdown volt (BV ) because of higher sheet carrier density ns in the 2-D electron gas.”