Tseung-Yuen Tseng
Electrical and Electronic Engineering · 2000–2017
A researcher in the Science corpus: 13 papers; trusts 8 researchers and is trusted by 0 researchers here, as inferred from the citation graph.
Subfields
- Electrical and Electronic Engineering — 191 citations into it
- Materials Chemistry — 160 citations into it
- Biomedical Engineering — 58 citations into it
- Atomic and Molecular Physics, and Optics — 18 citations into it
Whom Tseung-Yuen Tseng trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Papers from Tseung-Yuen Tseng's perspective
Ordered by how strongly the researchers Tseung-Yuen Tseng trusts endorse each paper. Same corpus, a different order for every researcher.
- Resistance switching of the nonstoichiometric zirconium oxide for nonvolatile memory applications (IEEE Electron Device Letters)
- A polymer/semiconductor write-once read-many-times memory (Nature)
- The missing memristor found (Nature)
- A novel nonvolatile memory with spin torque transfer magnetization switching: spin-ram (IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.)
- Resistive switching in transition metal oxides
- Recent developments in magnetic tunnel junction MRAM
- Low-cost and nanoscale non-volatile memory concept for future silicon chips (Nature Materials)
- Overview of candidate device technologies for storage-class memory (IBM Journal of Research and Development)
- Magnetic Domain-Wall Racetrack Memory (Science)
- Memristive switching mechanism for metal/oxide/metal nanodevices. (Nature Nanotechnology)
Their papers
- Characteristics and Electrochemical Performance of Supercapacitors with Manganese Oxide-Carbon Nanotube Nanocomposite Electrodes (2005) — 222 citations
- Device modeling of ferroelectric memory field-effect transistor (FeMFET) (2002) — 140 citations
- Switching mechanism of double forming process phenomenon in ZrOx/HfOy bilayer resistive switching memory structure with large endurance (2014) — 138 citations
- Modified resistive switching behavior of ZrO2 memory films based on the interface layer formed by using Ti top electrode (2007) — 139 citations
- Effect of Top Electrode Material on Resistive Switching Properties of $\hbox{ZrO}_{2}$ Film Memory Devices (2007) — 304 citations
- Multilevel resistive switching in Ti/CuxO/Pt memory devices (2010) — 154 citations
- Metal oxide resistive switching memory: Materials, properties and switching mechanisms (2017) — 150 citations
- Overview of emerging nonvolatile memory technologies (2014) — 648 citations
- Growth, dielectric properties, and memory device applications of ZrO2 thin films (2013) — 265 citations
- One-dimensional ZnO nanostructures: fabrication, optoelectronic properties, and device applications (2013) — 199 citations
- Field emission and photofluorescent characteristics of zinc oxide nanowires synthesized by a metal catalyzed vapor-liquid-solid process (2004) — 179 citations
- Copper-catalyzed ZnO nanowires on silicon (100) grown by vapor-liquid-solid process (2003) — 267 citations
- Progress in the developments of (Ba,Sr)TiO3 (BST) thin films for Gigabit era DRAMs (2000) — 277 citations