Recent developments in magnetic tunnel junction MRAM

By S. Tehrani, B. Engel, J. Slaughter, E. Chen, M. Deherrera, M. Durlam, P. Naji, R. Whig, J. Janesky, J. Calder. 2000

316 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/feb098cbf899b63bb4edf769bb5e5090122ccb6e

How researchers see this paper

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In Atomic and Molecular Physics, and Optics

1. S. Sze
2. Tseung-Yuen Tseng
3. J. S. Meena
4. Umesh Chand

In Electrical and Electronic Engineering

1. Tseung-Yuen Tseng

Citations in the corpus

• Overview of emerging nonvolatile memory technologies (2014, methodology): “In view of power consumption and speed, MRAM competes favorably than other existing memories such as DRAM and Flash, with an access time of a few nanoseconds [88-90].”
• Spintronics: Fundamentals and applications (2004, unknown): “, 1995) has renewed interest in the study of magnetic tunnel junctions, which are now the basis for the several magnetic random-access memory prototypes(16) (Parkin, Roche, et al., 1999; Tehrani et al., 2000).”
• Magnetoresistive random access memory using magnetic tunnel junctions (2003, methodology): “By optimizing the Al thickness and oxidation time [ 16 ], [27] to keep the AlOx chemical composition the same while changing the barrier thickness, we have been able to achieve MR 40% over a wide RA range of m [24].”