Multilevel resistive switching in Ti/CuxO/Pt memory devices

By Sheng-Yu Wang, C. Huang, Dai-Ying Lee, Tseung-Yuen Tseng, T. Chang. 2010

154 citations recorded by the source corpus.

Subfields: Cellular and Molecular Neuroscience, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/5b04ae3f295496a6497c3faae12a03f66c34d7ca

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Cellular and Molecular Neuroscience

1. Razali Ismail
2. Ee Wah Lim

In Electrical and Electronic Engineering

1. Razali Ismail
2. Ee Wah Lim

Citations in the corpus

• Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey (2015, background): “[46] reported that the SCLC is the dominant conduction mechanism in HRS and negative-based LRS of the Ti/CuxO/Pt device.”