A polymer/semiconductor write-once read-many-times memory

By S. Möller, C. Perlov, Warren Jackson, C. Taussig, Stephen R. Forrest. Nature, 2003

682 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Polymers and Plastics

View Paper: https://www.semanticscholar.org/paper/5111051b4c184afb3501862a0416b4c6fe1e6a88

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Yang Yang
2. Jianyong Ouyang
3. Chih-Wei Chu
4. Paul W. M. Blom
5. Tseung-Yuen Tseng
6. R. Rosezin
7. Rainer Waser
8. Gerwin H. Gelinck

In Polymers and Plastics

1. Yang Yang
2. Jianyong Ouyang
3. Chih-Wei Chu
4. Paul W. M. Blom
5. Rainer Waser
6. Gang Li
7. Yongfang Li
8. H. Yip

Citations in the corpus

• Complementary resistive switches for passive nanocrossbar memories. (2010, background): “The integration of a rectifying element would solve the sneak path problem, but no sufficiently scalable material has been found ye”
• Overview of emerging nonvolatile memory technologies (2014, background): “It is mainly because of its expansion capability in 3-D space [129] since most polymers are organic materials consisting of long chains of single molecules.”
• Understanding the phase-change mechanism of rewritable optical media (2004, background): “gif" NDATA ITEM> ]> Recent advances in multimedia would have been impossible without computer performance getting faster and the stored information dense”