Memristive switching mechanism for metal/oxide/metal nanodevices.
By J. Joshua Yang, Matthew D. Pickett, Xuema Li, D. Ohlberg, Duncan R. Stewart, R. S. Williams. Nature Nanotechnology, 2008
2,845 citations recorded by the source corpus.
Subfields: Cellular and Molecular Neuroscience, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/9299ad6ecbcab8557bf80334d7d73c60757c24d8
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In Cellular and Molecular Neuroscience
- H. Akinaga
- Hisashi Shima
- M. Di Ventra
- Yuriy V. Pershin
- Christos Papavassiliou
- T. Prodromakis
- C. Toumazou
- Peng Li
In Electrical and Electronic Engineering
- Vincent Garcia
- Manuel Bibes
- Yuriy V. Pershin
- M. Di Ventra
- Peng Li
- Yenpo Ho
- Garng M. Huang
- Fernando Corinto
Citations in the corpus
- Ferroelectric tunnel junctions for information storage and processing (2014, background): “Investigations on nanoscale tunnel junctions are required to evaluate the limit of scalability of the devices and assess their potential as non-volatile memories and as memristors in massively parallel architectures 80 .”
- Endurance/Retention Trade-off on $\hbox{HfO}_{2}/\hbox{Metal}$ Cap 1T1R Bipolar RRAM (2013, background): “values for oxygen diffusion barrier in amorphous HfO2 bulk [5], [6].”
- Modern Microwave Ferrites (2012, background): “, also in 2008 [227], demonstrated a nonvolatile memristor memory cell that stores information in bistable conductance states.”