Switching mechanism of double forming process phenomenon in ZrOx/HfOy bilayer resistive switching memory structure with large endurance

By Chun-Yang Huang, Chung-Yu Huang, T. Tsai, Chun-An Lin, Tseung-Yuen Tseng. 2014

138 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/55cd41dddaee68dc96a2b17e9769aa8e95b8054e

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Tseung-Yuen Tseng

In Materials Chemistry

1. S. Sze
2. Tseung-Yuen Tseng
3. J. S. Meena
4. Umesh Chand

Citations in the corpus

• Overview of emerging nonvolatile memory technologies (2014, background): “This device is based on the bistable resistance state found for almost any oxide material, including NiO, ZrO2, HfO2, SrZrO3, and BaTiO3 [115-119].”