Low-cost and nanoscale non-volatile memory concept for future silicon chips

By M. Lankhorst, B. Ketelaars, Rob Wolters. Nature Materials, 2005

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Resonant bonding in crystalline phase-change materials. (2008, background): “It could enable phase-change memory to replace flash memory in the future and has the potential to create a ‘universal memory’ that might compete with the speed of dynamic random access memor”
Phase-change random access memory: A scalable technology (2008, methodology): “Several groups have studied phase-change memory scaling [13, 23].”
Overview of emerging nonvolatile memory technologies (2014, background): “Volatile memories consist mostly of DRAM [17], which can be further classified into SDRAM and mobile RAM which only retain information when current is constantly supplied to the device [18].”
Phase change memory technology (2010, background): “Several factors contribute to nucleation and growth kinetics: temperature[98], composition[77, 99, 100], material interfaces[101], device geometry[77, 102], device size[33, 103], material thickness[42, 66], polarity[104], and device history[96, 97].”
Interfacial phase-change memory. (2011, neutral): “The local atomic structure transformed into the cubic crystalline phase at a temperature of 155 ± 10 °C, which is consistent with the crystallization temperature of the Ge 2 Sb 2 Te 5 (GST) composite allo”