A novel nonvolatile memory with spin torque transfer magnetization switching: spin-ram

By M. Hosomi, H. Yamagishi, T. Yamamoto, K. Bessho, Y. Higo, K. Yamane, H. Yamada, M. Shoji, H. Hachino, C. Fukumoto and 2 more. IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest., 2005

806 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Computer Networks and Communications, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/d8a5aeab4db5ea38dfe46f39450c80b3fd85662d

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Citations in the corpus

Present and Future Non-Volatile Memories for Space (2010, background): “Research and development is ongoing on a solution exploiting the spin torque effect [173].”
Measurement of the spin-transfer-torque vector in magnetic tunnel junctions (2007, background): “This is a promising new mechanism for the write operation of nanomagnetic memory element”
Spin-transfer effects in nanoscale magnetic tunnel junctions (2004, background): “Sony has already demonstrated a 4 kb test chip that uses spin-transfer as the write mechanism [86].”
The emergence of spin electronics in data storage. (2007, background): “Companies have already presented several demonstrations of 'spin-RAM”
Magnetic Tunnel Junctions for Spintronic Memories and Beyond (2007, methodology): “More compact and fast thin magnetic-film memories, developed subsequently that were supposed to be nonvolatile, suffered from creep of domain walls, a slow motion of the boundary of regions having different magnetization directions to reduce the magnetostatic energy, which resulted in loss of…”
Proposal of a Spin Torque Majority Gate Logic (2010, methodology): “(STTRAM) [17] and therefore are entirely compatible with the CMOS process.”
Overview of emerging nonvolatile memory technologies (2014, background): “The memory cell of STT-MRAM is composed of a transistor, an MTJ, a word line (WL), a bit line (BL), and a source line (SL) [95].”
Towards spike-based machine intelligence with neuromorphic computing (2019, background): “Various works based on memristive technologies 105,106 such as resistive random-access memory (RRAM) 107 , phase-change memory (PCM) 108 and spin-transfer torque magnetic random-access memory (STT-MRAM) 109 have been explored for both in situ dot-product computations and synaptic learning based on S”
After Hard Drives—What Comes Next? (2009, background): “Switching MTJ states from antiparallel or “1” to parallel or “0” and vice versa is performed by running a polarized electron current from the top to the bottom of the MTJ and vice versa [18].”
Evaluating STT-RAM as an energy-efficient main memory alternative (2013, background): “Spin-Transfer Torque RAM (STT-RAM) is another competing technology that has also come under much scrutiny recently [8], [15], [23], [54].”
Circuit and microarchitecture evaluation of 3D stacking magnetic RAM (MRAM) as a universal memory replacement (2008, methodology): “18μm MRAM work [2], the current amplitude we need for 90nm technology about 216μA.”