Device modeling of ferroelectric memory field-effect transistor (FeMFET)

By H. Lue, Chien-Jang Wu, Tseung-Yuen Tseng. 2002

140 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/1ac7eb7cc34811bc3be3fc8948fbeec21f525bfc

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Supriyo Datta
2. Souvik Mahapatra
3. R. Clark
4. Mark S. Lundstrom
5. Shimeng Yu
6. Eric Pop
7. Anisur Rahman
8. Siyu Koswatta

In Materials Chemistry

1. Supriyo Datta

Citations in the corpus

• Critical Role of Interlayer in Hf0.5Zr0.5O2 Ferroelectric FET Nonvolatile Memory Performance (2018, background): “Finally, the theoretical MW in FeFET is approximately 2EC × tFE (EC is the coercive field and tFE is the FE thickness) [6], but most reported HfO2-based FeFETs exhibit MW around 1 V for tFE ≈ 10 nm, about half of the maximum MW.”