Resistive switching in transition metal oxides

By A. Sawa. 2008

2,605 citations recorded by the source corpus.

Rapid advances in information technology rely on high-speed and large-capacity nonvolatile memories. A number of alternatives to contemporary Flash memory have been extensively studied to obtain a more powerful and functional nonvolatile memory. We review the current status of one of the alternatives, resistance random access memory (ReRAM), which uses a resistive switching phenomenon found in transition metal oxides. A ReRAM memory cell is a capacitor-like structure composed of insulating or semiconducting transition metal oxides that exhibits reversible resistive switching on applying voltage pulses. Recent advances in the understanding of the driving mechanism are described in light of experimental results involving memory cells composed of perovskite manganites and titanates.

Subfields: Electrical and Electronic Engineering, Materials Chemistry, Polymers and Plastics

View Paper: https://www.semanticscholar.org/paper/2401ce89328993175af3399fe568b68a4cd251f7

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In Electrical and Electronic Engineering

In Materials Chemistry

In Polymers and Plastics

Citations in the corpus

Present and Future Non-Volatile Memories for Space (2010, background): “storage element or it can be related to a modification of the whole interface between the metal electrode and the oxide [8].”
In-memory computing with resistive switching devices (2018, background): “Also, non-filamentary switching has been demonstrated in RRAM by interface switching, where the voltage-induced defect migration results in a uniform change of a Schottky or tunnelling barrier across the whole device area 22 .”