Resistance switching of the nonstoichiometric zirconium oxide for nonvolatile memory applications

By Dongsoo Lee, Hyejung Choi, H. Sim, Dooho Choi, Hyunsang Hwang, Myoung‐Jae Lee, Sun-ok Seo, I. Yoo. IEEE Electron Device Letters, 2005

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Improvement of Resistive Switching Properties in $ \hbox{ZrO}_{2}$-Based ReRAM With Implanted Ti Ions (2009, unknown): “Choosing a proper top electrode (TE) [6], controlling the oxygen content of ZrOx [5], and doping impurities in ZrO2 [7] are reported to improve the performances of ZrO2-based ReRAM.”
Atomic structure of conducting nanofilaments in TiO2 resistive switching memory. (2010, background): “Among the various oxide materials demonstrating unipolar switching behaviou”
Nonpolar Nonvolatile Resistive Switching in Cu Doped $\hbox{ZrO}_{2}$ (2008, background): “Even within the class of ZrO2-based ReRAM, the possible switching mechanisms seem to be surprisingly diverse, including electron trapping and detrapping [9], [13], formation and rupture of conducting filament [10], and the motion of oxygen vacancy/ion [12].”
Resistive Switching Properties of $\hbox{Au}/ \hbox{ZrO}_{2}/\hbox{Ag}$ Structure for Low-Voltage Nonvolatile Memory Applications (2010, background): “with some other reports on ZrO2-based RRAM devices [1]–[6].”
Effect of Top Electrode Material on Resistive Switching Properties of $\hbox{ZrO}_{2}$ Film Memory Devices (2007, background): “Due to these excellent characteristics, a number of metal oxides, such as SrZrO3 [1], Pr1−xCaxMnO3 [2], [3], Nb2O5 [4], TiO2 [5], [6], NiO [7], and ZrO2 [ 8 ], have been studied.”