Modified resistive switching behavior of ZrO2 memory films based on the interface layer formed by using Ti top electrode

By Chih-Yang Lin, C. Wu, Chenming Wu, Tseung-Yuen Tseng, Chenming Hu. 2007

139 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Polymers and Plastics

View Paper: https://www.semanticscholar.org/paper/f5dbb359b75cd4b66b07b8a76167fdb2fc0feeec

How researchers see this paper

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In Electrical and Electronic Engineering

1. Shibing Long
2. Tseung-Yuen Tseng
3. Wen Wang

Citations in the corpus

• Nonpolar Nonvolatile Resistive Switching in Cu Doped $\hbox{ZrO}_{2}$ (2008, background): “Even within the class of ZrO2-based ReRAM, the possible switching mechanisms seem to be surprisingly diverse, including electron trapping and detrapping [9], [13], formation and rupture of conducting filament [10], and the motion of oxygen vacancy/ion [12].”
• Overview of emerging nonvolatile memory technologies (2014, background): “have indicated that the interface plays an important role in enhancing the performances of RRAM [122,123].”