Effect of Top Electrode Material on Resistive Switching Properties of $\hbox{ZrO}_{2}$ Film Memory Devices
By Chih-Yang Lin, Chenming Wu, C. Wu, Tzyh-Cheang Lee, Fu-Liang Yang, Chenming Calvin Hu, Tseung-Yuen Tseng. IEEE Electron Device Letters, 2007
304 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/3094c14bc5bd5e9d41d110f7115516308104d74f
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In Electrical and Electronic Engineering
Citations in the corpus
- Improvement of Resistive Switching Properties in $ \hbox{ZrO}_{2}$-Based ReRAM With Implanted Ti Ions (2009, methodology): “First, the electroforming process is removed in the Cu/ZrO2:Ti/Pt device [shown in Fig. 1(b)], whereas similar to most of the binary TMO-based ReRAMs [2]–[ 6 ], the electroforming process is prerequisite to trigger resistive switching in the Cu/ZrO2/Pt device, and the electroforming bias is about 10”
- Unified Physical Model of Bipolar Oxide-Based Resistive Switching Memory (2009, background): “This explains well the dependence of RRAM performance on electrode material [16].”
- Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications (2020, background): “[55] 2007 Ti ZrO2 Pt Bipolar NS NS > 104 cycles 8.”
- A Phenomenological Model for the Reset Mechanism of Metal Oxide RRAM (2010, unknown): “, Pt/ZrO2/Pt [11], Pt/HfO2/Pt [12], Pt/ZnO/Pt [13], etc.”