Martin D. Giles

Electrical and Electronic Engineering · 2004–2011

A researcher in the Science corpus: 4 papers; trusts 1 researcher and is trusted by 0 researchers here, as inferred from the citation graph.

Subfields

Whom Martin D. Giles trusts

Their strongest outbound trust, strongest first, inferred from their citations.

  1. Massimo V. Fischetti (in Electrical and Electronic Engineering)

Papers from Martin D. Giles's perspective

Ordered by how strongly the researchers Martin D. Giles trusts endorse each paper. Same corpus, a different order for every researcher.

  1. A review of recent MOSFET threshold voltage extraction methods (Microelectronics and reliability)
  2. Intrinsic parameter fluctuations in decananometer MOSFETs introduced by gate line edge roughness
  3. Fabrication and mobility characteristics of ultra-thin strained Si directly on insulator (SSDOI) MOSFETs (IEEE International Electron Devices Meeting 2003)
  4. Designing reliable systems from unreliable components: the challenges of transistor variability and degradation (IEEE Micro)
  5. A 90nm high volume manufacturing logic technology featuring novel 45nm gate length strained silicon CMOS transistors (IEEE International Electron Devices Meeting 2003)
  6. Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors
  7. Poly-Si-Gate-Related Variability in Decananometer MOSFETs With Conventional Architecture (IEEE Transactions on Electron Devices)
  8. Random Dopant Fluctuation in Limited-Width FinFET Technologies (IEEE Transactions on Electron Devices)
  9. Long-range Coulomb interactions in small Si devices. Part II. Effective electron mobility in thin-oxide structures
  10. Hole mobility enhancements and alloy scattering-limited mobility in tensile strained Si/SiGe surface channel metal-oxide-semiconductor field-effect transistors

Their papers