Random Dopant Fluctuation in Limited-Width FinFET Technologies

By M. Chiang, Jeng-Nan Lin, Keunwoo Kim, C. Chuang. IEEE Transactions on Electron Devices, 2007

141 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/899e5a941a43bf9a8171426f242ecad9b6f4563a

How researchers see this paper

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In Electrical and Electronic Engineering

1. Martin D. Giles
2. Kelin J. Kuhn
3. Roza Kotlyar
4. Mamidala Jagadesh Kumar
5. Bevan M. Baas
6. Aaron Stillmaker
7. Qiang Li
8. Kei May Lau

Citations in the corpus

• Fabrication and Characterization of the Charge-Plasma Diode (2010, background): “ing control: doping fluctuation [6], [7], doping activation [8], and obtaining steep doping profiles demanding a low temperature budget.”
• The Charge Plasma P-N Diode (2008, unknown): “, [1] and [2]), doping activation (see, e.”
• Process Technology Variation (2011, background): “condition leads to an expression for threshold voltage [29], [30] of the form”