Hole mobility enhancements and alloy scattering-limited mobility in tensile strained Si/SiGe surface channel metal-oxide-semiconductor field-effect transistors

By C. Leitz, M. Currie, M. Lee, Z. Cheng, D. Antoniadis, E. Fitzgerald. 2002

165 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/a8c8b2e1b9259167142086069c8f4079b792f872

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In Electrical and Electronic Engineering

1. Borna Obradovic
2. Martin D. Giles
3. Lucian Shifren
4. Philippe Matagne
5. E. Wang
6. Daniel Chrastina
7. M. Stettler
8. S. Cea

Citations in the corpus

• Physics of Hole Transport in Strained Silicon MOSFET Inversion Layers (2006, methodology): “We also show data from Rim et al. [27] and Leitz et al. [ 28 ] for comparison.”
• Low-energy plasma-enhanced chemical vapor deposition for strained Si and Ge heterostructures and devices (2004, background): “The in-plane lattice constant is approximately equivalent to that of a fully-relaxed 40% VS, which is close to the optimum value for room-temperature strained-Si n-MOSFET performance [25].”