Physics of Hole Transport in Strained Silicon MOSFET Inversion Layers

By E. Wang, Philippe Matagne, Lucian Shifren, Borna Obradovic, Roza Kotlyar, S. Cea, M. Stettler, Martin D. Giles. IEEE Transactions on Electron Devices, 2006

138 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/014c5acefe4e612e8360f4528c1dba3f2ec872bf

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In Electrical and Electronic Engineering

1. Ryosho Nakane

Citations in the corpus

• Carrier-Transport-Enhanced Channel CMOS for Improved Power Consumption and Performance (2008, background): “to the effective-hole-mass reduction by uniaxial compressive strain along 〈110〉 axis [36], [37].”