Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors
By M. Lee, E. Fitzgerald, M. Bulsara, M. Currie, Anthony Lochtefeld. 2005
921 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/3fca20876ecaef6ce62c5c63990dd87a2736772e
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In Electrical and Electronic Engineering
- Zhenan Bao
- Alán Aspuru-Guzik
- Borna Obradovic
- Tony Low
- Martin D. Giles
- Lucian Shifren
- Volker J. Sorger
- D. van Thourhout
Citations in the corpus
- Strain: A Solution for Higher Carrier Mobility in Nanoscale MOSFETs (2009, background): “(27) published a review of the history of and progress in high-mobility biaxially strained Si, SiGe, and Ge channel MOSFETs.”
- Fundamentals of silicon material properties for successful exploitation of strain engineering in modern CMOS manufacturing (2006, background): “Literature report shows dislocation density in the range of 10(6) cm−2 for a typical strained Si on relaxed SiGe wafer [159].”
- Strain effects in graphene and graphene nanoribbons: The underlying mechanism (2010, background): “Strain in Si, SiGe, and Ge has been successfully employed in the semiconductor industry to improve the mobility of field-effect transistors (FETs) [17].”
- Physics of Hole Transport in Strained Silicon MOSFET Inversion Layers (2006, background): “enhanced PMOS have been implemented in commercial products since 2003, a comprehensive physical model describing hole transport under both uniaxial and biaxial stresses is still lacking [ 6 ].”
- Strain-engineered high-responsivity MoTe2 photodetector for silicon photonic integrated circuits (2019, background): “By inducing strain, the electronic band structure can be modified by epitaxial growth techniques to control the lattice constant, which, for example, can enable a reduction of the effective mass and, thus, positively impacting mobility [4,5].”
- Tuning charge transport in solution-sheared organic semiconductors using lattice strain (2011, methodology): “For inorganic semiconductors, a general method of increasing charge carrier mobility is to introduce strain within the crystal lattic”