Analysis of graphene nanoribbons as a channel material for field-effect transistors

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Graphene Transistors: Status, Prospects, and Problems (2013, background): “nanoribbons [63], [64], bilayer graphene [65], and carbon nanotubes”
Performance Projections for Ballistic Graphene Nanoribbon Field-Effect Transistors (2007, background): “891872 mobility [10], similar to the properties observed in CNTs.”
Scaling Behaviors of Graphene Nanoribbon FETs: A Three-Dimensional Quantum Simulation Study (2007, background): “An exceptionally high mobility (∼10 000 cm(2)/V s) of graphene and GNRs has been experimentally [4] and theoretically [7] demonstrated, which leads to the promise of near-ballistic transport in a nanoscale GNRFET.”
Single-layer MoS2 transistors. (2011, unknown): “9 ), in good agreement with theoretical models that predict decreased mobility in small-width graphene nanoribbons due to electron–phonon scatterin”
Impact of Size Effect on Graphene Nanoribbon Transport (2010, background): “A decrease in mobility of graphene nanoribbons (GNRs) is predicted for line-widths below 10 nm[6] where a significant bandgap opens up – the mobility is predicted to exponentially decrease as the bandgap becomes larger.”