Grain-Orientation Induced Work Function Variation in Nanoscale Metal-Gate Transistors—Part I: Modeling, Analysis, and Experimental Validation

By H. Dadgour, K. Endo, V. De, Kaustav Banerjee. IEEE Transactions on Electron Devices, 2010

164 citations recorded by the source corpus.

Subfields: Biomedical Engineering, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/b089b6d14809ec67c14710319c7476b4b21fe9e1

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Citations in the corpus

• Statistical Threshold-Voltage Variability in Scaled Decananometer Bulk HKMG MOSFETs: A Full-Scale 3-D Simulation Scaling Study (2011, methodology): “The impact of MGG on threshold-voltage variability has been previously investigated using analytical models [38]–[40] or simulations assuming square grains [41]–[43].”
• FinFET Versus Gate-All-Around Nanowire FET: Performance, Scaling, and Variability (2018, background): “4 eV with probability of 60% and 40% formation, respectively [40].”