Mario Lanza
Electrical and Electronic Engineering · 2011–2021
A researcher in the Science corpus: 12 papers; trusts 1 researcher and is trusted by 0 researchers here, as inferred from the citation graph.
Subfields
- Electrical and Electronic Engineering — 186 citations into it
Whom Mario Lanza trusts
Their strongest outbound trust, strongest first, inferred from their citations.
- Rainer Waser (in Electrical and Electronic Engineering)
Papers from Mario Lanza's perspective
Ordered by how strongly the researchers Mario Lanza trusts endorse each paper. Same corpus, a different order for every researcher.
- Resistive Switching: From Fundamentals of Nanoionic Redox Processes to Memristive Device Applications
- Fundamentals Of Modern Vlsi Devices
- Random Circuit Breaker Network Model for Unipolar Resistance Switching
- Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices (IEEE Transactions on Electron Devices)
- Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust HfO2 based RRAM (2008 IEEE International Electron Devices Meeting)
- Filament Conduction and Reset Mechanism in NiO-Based Resistive-Switching Memory (RRAM) Devices (IEEE Transactions on Electron Devices)
- Nanoionics-based resistive switching memories. (Nature Materials)
- Conductive bridging RAM (CBRAM): an emerging non-volatile memory technology scalable to sub 20nm (IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.)
- Understanding the switching-off mechanism in Ag+ migration based resistively switching model systems
- Low current resistive switching in Cu–SiO2 cells
Their papers
- Recommended Methods to Study Resistive Switching Devices (2018) — 574 citations
- Resistive switching in hafnium dioxide layers: Local phenomenon at grain boundaries (2012) — 172 citations
- The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials (2021) — 305 citations
- 2022 roadmap on neuromorphic computing and engineering (2021) — 589 citations
- Wafer-scale integration of two-dimensional materials in high-density memristive crossbar arrays for artificial neural networks (2020) — 385 citations
- A Review on Principles and Applications of Scanning Thermal Microscopy (SThM) (2019) — 177 citations
- A Review on Dielectric Breakdown in Thin Dielectrics: Silicon Dioxide, High‐k, and Layered Dielectrics (2019) — 243 citations
- Electronic synapses made of layered two-dimensional materials (2018) — 559 citations
- Graphene and Related Materials for Resistive Random Access Memories (2017) — 195 citations
- Coexistence of Grain‐Boundaries‐Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride (2017) — 285 citations
- Grain boundaries as preferential sites for resistive switching in the HfO2 resistive random access memory structures (2012) — 186 citations
- Grain boundary mediated leakage current in polycrystalline HfO2 films (2011) — 147 citations