Jichao Hu

Materials Chemistry · 2020

A researcher in the Science corpus: 1 paper; trusts 6 researchers and is trusted by 0 researchers here, as inferred from the citation graph.

Subfields

• Materials Chemistry — 60 citations into it
• Electronic, Optical and Magnetic Materials — 56 citations into it
• Renewable Energy, Sustainability and the Environment — 31 citations into it
• Electrical and Electronic Engineering — 15 citations into it

Whom Jichao Hu trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

1. Kohei Sasaki
2. Akito Kuramata
3. Masataka Higashiwaki

Papers from Jichao Hu's perspective

Ordered by how strongly the researchers Jichao Hu trusts endorse each paper. Same corpus, a different order for every researcher.

1. Device-Quality β-Ga2O3 Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy
2. 3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $\beta $ -Ga2O3 MOSFETs (IEEE Electron Device Letters)
3. High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes
4. State-of-the-art technologies of gallium oxide power devices
5. High-quality β-Ga2O3 single crystals grown by edge-defined film-fed growth
6. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
7. Field-Plated Ga2O3 MOSFETs With a Breakdown Voltage of Over 750 V (IEEE Electron Device Letters)
8. Si-Ion Implantation Doping in β-Ga2O3 and Its Application to Fabrication of Low-Resistance Ohmic Contacts
9. Fundamentals of Power Semiconductor Devices
10. 1.85 kV Breakdown Voltage in Lateral Field-Plated Ga2O3 MOSFETs (IEEE Electron Device Letters)

Their papers

• Progress of Ultra-Wide Bandgap Ga2O3 Semiconductor Materials in Power MOSFETs (2020) — 141 citations