Analytic solutions of charge and capacitance in symmetric and asymmetric double-gate MOSFETs

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Sensitivity of double-gate and FinFETDevices to process variations (2003, background): “, we can choose two different types of materials for its front and back gates [3], or use two different gate dielectric thicknesses), but its manufacture will involve greater process”
Charge-Based Modeling of Junctionless Double-Gate Field-Effect Transistors (2011, background): “Concerning undoped DG MOSFETs, an upper limit was indeed predicted from the exact solution [ 9 ] (which does not exist for the doped case).”
A continuous, analytic drain-current model for DG MOSFETs (2004, background): “Due to the mismatch of the gate work functions, there are two boundary conditions [ 6 ] and therefore two parameters: , , which satisfy a relationship in the plane.”
Double gate-MOSFET subthreshold circuit for ultralow power applications (2004, methodology): “1) Random dopant fluctuation: Use of undoped body eliminates this problem [7], [8].”
A physical short-channel threshold voltage model for undoped symmetric double-gate MOSFETs (2003, background): “Several studies [7], [11], [12] have tried to address these issues by solving the Poisson equation with the mobile charge term included in the channel region and defining in various alternative ways, such as by linear extrapolation of the mobile carrier sheet density versus gate voltage dependence [”