An analytical solution to a double-gate MOSFET with undoped body

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A continuous, analytic drain-current model for DG MOSFETs (2004, background): “Equation (1) can then be integrated twice to yield the solution [ 4 ]”
Analytic solutions of charge and capacitance in symmetric and asymmetric double-gate MOSFETs (2001, methodology): “In this paper, a one-dimensional (1-D) Poisson’s equation with only the inversion charge term is solved analytically for an undoped (or lightly doped) DG MOSFET [ 6 ].”
A physical short-channel threshold voltage model for undoped symmetric double-gate MOSFETs (2003, background): “As increases, the term reverses its sign, making the surface potential greater than the center potential, and the device enters a surface conduction mode, much similar to a bulk MOSFET [ 15 ].”
Sub-60-nm quasi-planar FinFETs fabricated using a simplified process (2001, background): “The Si Ge gate composition is chosen to provide the desired threshold voltage [3], [7].”