A physical short-channel threshold voltage model for undoped symmetric double-gate MOSFETs

By Qiang Chen, Evans M. Harrell II, James D. Meindl. 2003

262 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/c1dbfa2bdea1db54c20adce8b0825fc126d635da

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. H. A. Hamid
2. Benjamin Iñíguez
3. Jaume Roig Guitart

Citations in the corpus

• Analytical Model of the Threshold Voltage and Subthreshold Swing of Undoped Cylindrical Gate-All-Around-Based MOSFETs (2007, background): “In DG MOSFETs, the threshold voltage has been instead defined as the gate voltage at which the minimum sheet density of carriers Qinv reaches a value QTH, which can be identified as the onset of the turn-on condition [15], [16].”
• A 2-D Analytical Model for Double-Gate Tunnel FETs (2014, unknown): “Similar to MOSFETs, TFETs simulations demonstrate that V in the channel length direction stays constant (equal to VDS) except at the beginning of the channel.”