A comprehensive analytical subthreshold swing (S) model for double-gate MOSFETs

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Analytical Model of the Threshold Voltage and Subthreshold Swing of Undoped Cylindrical Gate-All-Around-Based MOSFETs (2007, background): “To find an expression for the subthreshold swing, we assume that the subthreshold drain current ID is proportional to the total amount of the free electrons diffusing over the virtual cathode [26], i.”
A physical short-channel threshold voltage model for undoped symmetric double-gate MOSFETs (2003, methodology): “The acceptable amount of change is assumed to be 70 mV. Under this condition, the channel length of a SDG MOSFET is projected as a function of (the minimum value of understood as the equivalent electrical oxide thickness is set to be 0.9 nm [1]), as shown in Fig. 5. The projections are compared with”
Low-subthreshold-swing tunnel transistors (2006, background): “In the MOSFET, the subthreshold swing is limited to (kT/q) ln10 or 60 mV/dec at room temperature, and with scaling, the subthreshold swing increases [1] (k is Boltzmann’s constant, q is the electron charge, and T is the temperature).”