Carrier scattering induced by thickness fluctuation of silicon-on-insulator film in ultrathin-body metal–oxide–semiconductor field-effect transistors

By K. Uchida, S. Takagi. 2003

142 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/fd5bad45d9fe094310375ea46dfc36654fe5e290

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Seonghoon Jin
2. Ting-Wei Tang

In Electrical and Electronic Engineering

1. Seonghoon Jin
2. Ting-Wei Tang
3. Massimo V. Fischetti

Citations in the corpus

• A Graphene Field-Effect Device (2007, background): “7 nm films [15][16] and electron mobility has been found to drop below μe = 70 cm(2)/Vs in tSi = 2.”
• Modeling of Surface-Roughness Scattering in Ultrathin-Body SOI MOSFETs (2007, background): “also containing offdiagonal elements, which yields the wellknown t(6)s dependence of the mobility [11]–[13].”