Stress control in GaN grown on silicon (111) by metalorganic vapor phase epitaxy

By E. Feltin, B. Beaumont, M. Laügt, P. Mierry, P. Vennégués, H. Lahrèche, M. Leroux, P. Gibart. 2001

260 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/5ee7b4f578f6d04920587b1e91dfa52765e385e7