Nonvolatile resistive switching memories-characteristics, mechanisms and challenges
By F. Pan, Chao Chen, Zhishun Wang, Yuchao Yang, Jing Yang, Fei Zeng. 2010
197 citations recorded by the source corpus.
This review presents a summary of current understanding of the resistive switching materials and devices which have inspired extraordinary interest all over the world. Although various switching behaviors and different conductive mechanisms are involved in the field, the resistive switching effects can be roughly classified into filament type and interface type according to their conducting behavior in low resistance state. For those filament based systems, the migration of metallic cations and oxygen vacancies, characterization of the filament as well as the role of Joule heating effects are discussed in detail. As to the interface based system, we describe the methods of modulating interface barrier height such as using different electrodes, inserting a tunnel layer. It is demonstrated that the switching mechanism can transform from one to another along the change of some specific conditions. We also give an overview on the latest developments in multilevel storage and the resistive switching in organic materials. In this paper, the solutions to address the sneak current problems in crossbar structure are discussed.
Subfields: Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/50fa5eeceb3ea83b9a4aa839783387ab739d7c66
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In Electrical and Electronic Engineering
Citations in the corpus
- Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications (2020, background): “The CF in oxygen vacancies filament-based RRAM ‘OxRRAM’ also known as valence change memory (VCM) is composed of oxygen vacancy defects, instead of metal atoms, due to anion migration within the storage material itself [96].”
- State of the art of metal oxide memristor devices (2016, background): “In this case, the remaining non-switching electrode area would be contributing to a parallel resistance, and the nanoscale size of the filament should hence be considered to determine the ultimate scaling limit of the device [18, 83].”