Impact of Temperature on the Resistive Switching Behavior of Embedded $\hbox{HfO}_{2}$-Based RRAM Devices

By C. Walczyk, D. Walczyk, Thomas Schroeder, T. Bertaud, M. Sowinska, M. Lukosius, M. Fraschke, D. Wolansky, Bernd Tillack, Enrique Miranda and 1 more. IEEE Transactions on Electron Devices, 2011

203 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/50057c912e1670978e1c9761289131ecc6525951

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In Electrical and Electronic Engineering

Citations in the corpus

Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: Modeling (2012, methodology): “05 eV was assumed for nD = 0 in agreement with the observed activation energy in reset-state HfOx RRAMs [27].”
Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications (2020, background): “The temperature study of TiN/HfO2/Ti/TiN [111] was carried out.”
Hardware implementation of memristor-based artificial neural networks (2024, unknown): “Hence, the development of new hardware for ANN implementation is strongly oriented to realize VMM operations in a more ef ﬁ cient way.”