T. Paul Chow
Proceedings of the IEEE · 2002–2006
A researcher in the Science corpus: 4 papers; trusts 0 researchers and is trusted by 2 researchers here, as inferred from the citation graph.
Who trusts T. Paul Chow overall
Papers from T. Paul Chow's perspective
Ordered by how strongly the researchers T. Paul Chow trusts endorse each paper. Same corpus, a different order for every researcher.
- High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior
- Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures
- High-voltage normally off GaN MOSFETs on sapphire substrates (IEEE Transactions on Electron Devices)
- N2O Processing Improves the 4H-SiC:SiO2 Interface
- Review on materials, microsensors, systems and devices for high-temperature and harsh-environment applications (IEEE transactions on industrial electronics (1982. Print))
- Time Dependence of Bias-Stress-Induced SiC MOSFET Threshold-Voltage Instability Measurements (IEEE Transactions on Electron Devices)
- Ultra-thin oxide reliability for ULSI applications
- 10-W/mm AlGaN-GaN HFET with a field modulating plate (IEEE Electron Device Letters)
- High breakdown GaN HEMT with overlapping gate structure (IEEE Electron Device Letters)
- AlGaN/GaN HEMTs-an overview of device operation and applications (Proceedings of the IEEE)
Their papers
- Silicon carbide benefits and advantages for power electronics circuits and systems (2002) — 486 citations
- High-voltage normally off GaN MOSFETs on sapphire substrates (2005) — 165 citations
- Enhancement-Mode n-Channel GaN MOSFETs on p and n-GaN/Sapphire Substrates (2006) — 146 citations
- SiC power Schottky and PiN diodes (2002) — 237 citations