Review on materials, microsensors, systems and devices for high-temperature and harsh-environment applications
By M. Werner, W. Fahrner. IEEE transactions on industrial electronics (1982. Print), 2001
323 citations recorded by the source corpus.
Subfields: Condensed Matter Physics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/6cd54f17a3de506c0845a770237e8af061408c78
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In Condensed Matter Physics
In Electrical and Electronic Engineering
Citations in the corpus
- Review: Semiconductor Piezoresistance for Microsystems (2009, background): “maximum operating temperature and band gaps for several semiconductor materials [321].”
- Comparative Study of Silicon-Based Ultraviolet Photodetectors (2012, background): “[16], high activation energy of the dopants [13], and undeveloped technology [13] [16].”
- Die Attach Materials for High Temperature Applications: A Review (2011, methodology): “Characteristics of Wide Band Gap Semiconductors at 300 K and Maximum Electronic Operating Temperatures [7], [8]”
- The Piezoresistive Effect of SiC for MEMS Sensors at High Temperatures: A Review (2015, unknown): “1) [14], [19].”
- Silicon carbide benefits and advantages for power electronics circuits and systems (2002, background): “A combination of a SiC BJT and a Schottky diode can benefit a number of lighting applications and other high temperature and harsh environment applications such as sensors and avionic products [70].”