Silicon carbide benefits and advantages for power electronics circuits and systems
By A. Elasser, T. Paul Chow. Proceedings of the IEEE, 2002
486 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/2ece4aa87b8fa6d9c2449ee6ef3bfdb75fb7f1e9
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In Electrical and Electronic Engineering
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Citations in the corpus
- An Experimental Investigation of the Tradeoff between Switching Losses and EMI Generation With Hard-Switched All-Si, Si-SiC, and All-SiC Device Combinations (2014, background): “The material properties of SiC enable practical unipolar power devices (MOSFET, JFET, and Schottky diode) to be created at blocking voltages approximately an order of magnitude greater than is possible in silicon [4].”
- HVDC Circuit Breakers: A Review Identifying Future Research Needs (2011, unknown): “and are intensively investigated [90], [91].”
- High-temperature electronics - a role for wide bandgap semiconductors? (2002, background): “As discussed in [9], [13], [60], and [61], much lighter doping ( ) and much larger depletion width () are required for a junction to block higher voltage.”
- Electric Drive Technology Trends, Challenges, and Opportunities for Future Electric Vehicles (2021, background): “SiC devices have been identified as the key solutions for high-switching-frequency, high-voltage, and high-temperature applications since the beginning of the century [18].”
- Single-Event Burnout Mechanisms in SiC Power MOSFETs (2018, background): “Compared to silicon, SiC has higher critical breakdown electric field and higher thermal conductivity [1].”
- Electrical Power Generation in Aircraft: Review, Challenges, and Opportunities (2018, background): “In particular, higher switching frequencies contribute to the reduction of filtering passive component size [107], while less series-connected modules (than traditional silicon-based counterpart) would be adopted for managing higher voltages [106].”
- High-power wind energy conversion systems: State-of-the-art and emerging technologies (2015, background): “The two wide band-gap materials for power applications are Gallium Nitride (GaN) and Silicon Carbide (SiC) [251]–[255].”