Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures

By Oliver Ambacher, J. Majewski, C. Miskys, A. Link, M. Hermann, M. Eickhoff, M. Stutzmann, F. Bernardini, V. Fiorentini, V. Tilak and 2 more. 2002

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High-voltage normally off GaN MOSFETs on sapphire substrates (2005, background): “3 eV, the largest of all the dielectrics that have been characterized on GaN [11]–[14] as shown in Table I.”
Self-Consistent Analysis of Strain-Compensated InGaN–AlGaN Quantum Wells for Lasers and Light-Emitting Diodes (2009, methodology): “interpolation [24], and the piezoelectric polarization can be expressed as follows [25]:”
Spontaneous Emission and Characteristics of Staggered InGaN Quantum-Well Light-Emitting Diodes (2008, neutral): “THE PARAMETER VALUES ARE TAKEN FROM [16]–[22]”
High-temperature modeling of AlGaN/GaN HEMTs (2009, methodology): “The methodology and the parameter values are after [32,33].”
Punch-through in short-channel AlGaN/GaN HFETs (2006, methodology): “The device and material parameters used have been adjusted to give reasonable agreement between the simulation and experiment for the 0.17- m device of Fig. 1. The piezoelectric/spontaneous polarization induced charge at the Al Ga N/GaN heterojunction isdetermined by the aluminum fraction [ 12 ].”